MOCVD stands for Metal-Organic Chemical Vapor Deposition. It is a chemical vapor deposition (CVD) technique used in the semiconductor industry to grow thin films of various materials, particularly compound semiconductors. MOCVD is a common method for depositing epitaxial layers of semiconductor materials with precise control over thickness, composition, and crystalline structure.
In MOCVD, the deposition process involves the reaction of volatile metal-organic compounds with a suitable precursor gas in a heated reactor chamber. The metal-organic compounds typically contain metal atoms from groups III, IV, or V of the periodic table, and the precursor gas is typically a hydride, such as ammonia (NH3). The reaction between the metal-organic compounds and the precursor gas occurs on a heated substrate, resulting in the deposition of a thin film.
The MOCVD process offers several advantages for growing thin films compared to other deposition techniques. It allows precise control of the composition and doping levels of the deposited films, which is crucial for creating semiconductor devices with specific electrical and optical properties. MOCVD also enables the growth of complex heterostructures, such as quantum wells and superlattices, which are important for advanced semiconductor devices like lasers, light-emitting diodes (LEDs), and high-electron-mobility transistors (HEMTs).
MOCVD is widely used in the fabrication of optoelectronic devices, including LEDs, laser diodes, photodetectors, and solar cells. It is also employed in the production of high-frequency and high-power electronic devices. The technique has played a significant role in advancing semiconductor technology and enabling the development of various electronic and optoelectronic devices we use today.
Post time: May-26-2023